Intel Unveils New Transistor | Chemical & Engineering News
 
 
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Web Date: January 30, 2007

Intel Unveils New Transistor

Hafnium-based materials will be incorporated in 45-nm-technology chips
Department: Science & Technology

In what it dubs the "biggest change to computer chips in 40 years," Intel says it is using hafnium-based dielectric insulating materials with metal gates to construct the transistors in its new 45-nm-technology chips.

During those 40 years, silicon dioxide, the transistor dielectric material of choice, was made thinner and thinner to maintain adequate capacitance as chip size shrank. In the most advanced chips in production today, which have 65-nm circuit lines, the SiO2 . . .

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