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Rohm and Haas has signed joint development agreements with IBM in two areas of semiconductor manufacturing. Under one pact, the firms will develop chemical mechanical planarization processes to make next-generation semiconductor wafers that feature 32-nm- and 22-nm-wide circuit lines. Rohm and Haas says it will target low-stress wafer polishing with new polishing pads and slurries. In the second deal, the companies will create new lithographic patterning materials for implanting ions during transistor fabrication.
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