Advertisement

If you have an ACS member number, please enter it here so we can link this account to your membership. (optional)

ACS values your privacy. By submitting your information, you are gaining access to C&EN and subscribing to our weekly newsletter. We use the information you provide to make your reading experience better, and we will never sell your data to third party members.

ENJOY UNLIMITED ACCES TO C&EN

Materials

Smallest Phase-Change Material To Date

Germanium telluride nanowires could lead to new types of ultracompact digital memory devices

by Journal News and Community
September 23, 2013 | A version of this story appeared in Volume 91, Issue 38

[+]Enlarge
Credit: Nano Lett.
A model (above) depicts a carbon nanotube (gray) filled with germanium telluride, a phase-changing material. A micrograph (right) shows the actual tubes and the placement of the Ge (purple) and Te (green) atoms.
A model (left) depicts a carbon nanotube (gray) filled with germanium telluride, a phase-changing material. A micrograph (right) shows the actual tubes and the placement of the Ge (purple) and Te (green) atoms.
Credit: Nano Lett.
A model (above) depicts a carbon nanotube (gray) filled with germanium telluride, a phase-changing material. A micrograph (right) shows the actual tubes and the placement of the Ge (purple) and Te (green) atoms.

To build fast smartphones and tablet computers that can store troves of data, some engineers have tinkered with memory devices that rely on phase-changing chalcogenide materials. With a little pulse of heat, these materials quickly morph between crystalline and amorphous states, which serve as 1s and 0s in memory cells. Researchers have now developed a synthesis technique leading to the smallest working phase-change material yet: one-dimensional germanium-telluride nanowires with diameters less than 2 nm (Nano Lett. 2013, DOI: 10.1021/nl4010354). To make the nanowires, Cristina E. Giusca of the U.K.’s National Physical Laboratory and her team used carbon nanotubes as templates, filling the inner cores of the nanotubes with molten GeTe using capillary action. They showed that the resulting amorphous GeTe nanowires can be converted to the crystalline state and back again when heated by a beam of electrons. Giusca thinks the wires could lay the foundation for completely novel architectures for memory devices. Her team is currently working toward integrating the nanowires into simple devices.

Article:

This article has been sent to the following recipient:

0 /1 FREE ARTICLES LEFT THIS MONTH Remaining
Chemistry matters. Join us to get the news you need.