Researchers Claim Photoresist Advance | Chemical & Engineering News
Volume 92 Issue 29 | p. 16 | Concentrates
Issue Date: July 21, 2014

Researchers Claim Photoresist Advance

Department: Business
Keywords: semiconductor, photoresist, EUV
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Ashby (left) and Olynick at the Berkeley Lab’s Advanced Light Source EUV beamline.
Credit: Lawrence Berkeley National Lab
Photo of Paul Ashby (left) and Deidre Olynick at the Berkeley Lab’s Advanced Light Source EUV beamline.
 
Ashby (left) and Olynick at the Berkeley Lab’s Advanced Light Source EUV beamline.
Credit: Lawrence Berkeley National Lab

Backed by funding from Intel and the chemical maker JSR, researchers at the Department of Energy’s Lawrence Berkeley National Lab have created a new kind of photoresist they say will work with the extreme ultraviolet (EUV) light required for the next generation of semiconductor manufacturing. A team led by Paul Ashby and Deirdre Olynick combined two kinds of resists—one cross-linking and one chemically amplified—to create a resist that forms smooth circuit lines with 13.5-nm EUV light, according to the researchers. Companies should be able to commercialize the resist by 2017, they add.

 
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