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Materials

Researchers Claim Photoresist Advance

by Michael McCoy
July 21, 2014 | APPEARED IN VOLUME 92, ISSUE 29

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Credit: Lawrence Berkeley National Lab
Ashby (left) and Olynick at the Berkeley Lab’s Advanced Light Source EUV beamline.
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Credit: Lawrence Berkeley National Lab
Ashby (left) and Olynick at the Berkeley Lab’s Advanced Light Source EUV beamline.

Backed by funding from Intel and the chemical maker JSR, researchers at the Department of Energy’s Lawrence Berkeley National Lab have created a new kind of photoresist they say will work with the extreme ultraviolet (EUV) light required for the next generation of semiconductor manufacturing. A team led by Paul Ashby and Deirdre Olynick combined two kinds of resists—one cross-linking and one chemically amplified—to create a resist that forms smooth circuit lines with 13.5-nm EUV light, according to the researchers. Companies should be able to commercialize the resist by 2017, they add.

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